Manufacturing Technology: | Integrated Circuits Device |
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Material: | Compound Semiconductor |
Type: | Intrinsic Semiconductor |
Package: | MCM |
Signal Processing: | Digital |
Application: | Automobile |
Samples: |
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Customization: |
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Parameter | symbol | conditions | value | unit |
Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25ºC | 650 | V |
Continuous Collector Current | IC | Tc=65ºC Tvj=175ºC | 400 | A |
Tc=25ºC Tvj=175ºC | 500 | A | ||
Peak Collector Current | ICRM | tp=1ms | 800 | A |
Gate-Emitter Voltage | VGES | Tvj=25ºC | ±20 | V |
Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25ºC Tvjmax=175ºC |
1250 | W |
Diode DC Forward Current | IF | Tc=100ºC | 400 | A |
Diode peak Forward Current | IFRM | IFRM=2IF | 800 | A |
Model | Vces(V) | Ic(T=80)(A) | VCE(sat) Tj=125ºC | Eon+Eof(Tj=125)(mj) | Rthjc(KW) |
WGL200F65A10 | 650 | 200 | 1.45 | 10 | 0.19 |
WGL300F65A10 | 650 | 300 | 1.45 | 15 | 0.14 |
WGL400F65A10 | 650 | 400 | 1.45 | 20 | 0.12 |
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