N3 Series 1200V/25A IGBT Module Replace Infineon Fp25r12W2t4

• Customization: Available
• Key Material: Sic
• Manufacturing Technology: Integrated Circuits Device
• Model NO.: WGL25P120N3
• Material: Compound Semiconductor
• Type: Intrinsic Semiconductor
• Package: MCM
• Signal Processing: Digital
• Application: Inverter
• Model: Wgl25p120n3
• Batch Number: 2021+
• Brand: Cetc
• Transport Package: Carton
• Specification: L152*W62mm
• Origin: Cn
• HS Code: 8504409190

Product Description

Product Photo:


Product parameter :
 

Parameter	symbol	conditions	value	unit
Collector-Emitter Voltage	VCES	VGE=0V, IC =1mA, Tvj=25ºC	1200	V
Continuous Collector Current	IC	Tc=100ºC	25	A
Peak Collector Current	ICRM	ICRM=2IC	50	A
Gate-Emitter Voltage	VGES	Tvj=25ºC	±20	V
Total Power Dissipation (IGBT-inverter)	Ptot	Tc=25ºC Tvjmax=175ºC	175	W

Features

• Low switching losses
• Tj max = 175°C
• Isolated heatsink using DBC technology
• Low indactance case
• Low Vce(sat) with positive temperature coefficient
• Including fast & soft recovery anti-parallel FWD
• High short circuit capability(10us)

Benefits

• Higher inverter output current for the same frame size
• Reduced system costs by simplification of the inverter systems
• Easy and most reliable assembly
• High inter-connection reliability
• suitable for press-in & soldering process

Applications

• Commercial, construction and agricultural vehicles (CAV)
• Motor control and drives
• Solutions for solar energy systems
• Uninterruptible Power Supply (UPS)
• Soft switching welding machine
• AC and DC servo drive amplifier

E52/E53 IGBT module is one of the most popular IGBT packages worldwide and is used in many different applications, such as General Purpose Drives; Commercial, Construction and Agricultural Vehicles as well as eBus; Solar; Wind; Traction; UPS and finally, Transmission and Distribution. In the latest module generation it is now feasible to increase the module current to 900 A. This is possible through the new IGBT7 technology enabling a higher power density and reduced BoM costs.

Circuit Diagram


Package drawing



N2 Series  products:
 

Model	Vces(V)	Ic(T=80ºC)(A)	VCE(sat) Tj=125ºC	Eon+Eof(Tj=25)(mj)	Rthjc(KW)
WGL75TL65N3	650	75	1.65	5.61	0.33
WGL100TL65N3	650	100	1.65	8.55	0.24
WGL150TL65N3	650	150	1.65	13.4	0.17
WGL50F120N3	1200	50	1.85	9.41	0.18
WGL75F120N3	1200	75	1.85	12.35	0.11
WGL25P120N3	1200	25	1.85	4.56	0.68
WGL35P120N3	1200	35	1.85	6.27	0.43
WGF100TT120N3	1200	100	1.55	10.21	0.18
WGF150TT120N3	1200	150	1.55	14.22	0.16
WGF200TT120N3	1200	200	1.55	18.21	0.12

FAQ:

1.Why is the IGBT specified for 175ºC overload?

The CETC IGBT  is developed to operate at a continuous temperature of 175°C. The overload limitation is given by the package. Most of the applications are designed with an overload profile and here the IGBT is the perfect fit. The CETC IGBT provides the lowest static losses.


2.How to handle the high gate charge specified for IGBT datasheet?

The specified gate charge in the datasheet is for an operation with VGE of ± 20 V. Most customers use VGE in the range of +5.4 V to +7 V. Here the gate charge is much lower and with this value, typical switching frequencies can be addressed with standard drives.

3.Technical Support

In order to enable us to process your inquiry as efficiently as possible and ensure your case is duly reported, we kindly ask you to submit your request via our service team.