50A/1200V E73 IGBT Module Replcae Infineon Fp50r12kt4g

• Customization: Available
• Key Material: Sic
• Manufacturing Technology: Integrated Circuits Device
• Model NO.: WGL50P120E75
• Material: Compound Semiconductor
• Type: Intrinsic Semiconductor
• Package: MCM
• Signal Processing: Digital
• Application: Inverter
• Model: Wgl50p120e75
• Batch Number: 2021+
• Brand: Cetc
• Transport Package: Carton
• Specification: L122.5*W62.5mm
• Origin: Cn
• HS Code: 8504409190

Product Description

Product Photo:


Product parameter :
 

Parameter	symbol	conditions	value	unit
Collector-Emitter Voltage	VCES	VGE=0V, IC =1mA, Tvj=25ºC	1200	V
Continuous Collector Current	IC	Tc=80ºC, Tvjmax=175ºC	50	A
Peak Collector Current	ICRM	tp=1ms	100	A
Gate-Emitter Voltage	VGES	Tvj=25ºC	±20	V
Total Power Dissipation (IGBT-inverter)	Ptot	Tc=25ºC Tvjmax=175ºC	442	W

Features

• Low inductance case
• Low switching losses
• Integrated NTC temperature sensor
• Isolated baseplate
• Including fast & soft recovery anti-parallel FWD
• High short circuit capability(10us)
• Low inductance module structure
• Maximum junction temperature 175ºC

Benefits

• Higher inverter output current for the same frame size
• Reduced system costs by simplification of the inverter systems
• Easy and most reliable assembly
• High inter-connection reliability
• suitable for press-in & soldering process

Applications

• Commercial, construction and agricultural vehicles (CAV)
• Motor control and drives
• Solutions for solar energy systems
• Uninterruptible Power Supply (UPS)
• Soft switching welding machine
• AC and DC servo drive amplifier

E75 IGBT module is one of the most popular IGBT packages worldwide and is used in many different applications, such as General Purpose Drives; Commercial, Construction and Agricultural Vehicles as well as eBus; Solar; Wind; Traction; UPS and finally, Transmission and Distribution. In the latest module generation it is now feasible to increase the module current to 150 A. This is possible through the new  technology enabling a higher power density and reduced BoM costs.

Circuit Diagram


Package drawing



E75 Series  products:
 

Model	Vces(V)	Ic(T=80)(A)	VCE(sat) Tj=125ºC	Eon+Eof(Tj=125)(mj)	Rthjc(KW)
WGL50F120E75	1200	50	1.85	11.88	0.41
WGL75F120E75	1200	75	1.85	15.96	0.33
WGL100F120E75	1200	100	1.85	17.48	0.20
WGL150F120E75	1200	150	1.85	34.2	0.17

FAQ:

1.Why is the IGBT specified for 175ºC overload?

The CETC IGBT  is developed to operate at a continuous temperature of 175°C. The overload limitation is given by the package. Most of the applications are designed with an overload profile and here the IGBT is the perfect fit. The CETC IGBT provides the lowest static losses.


2.How to handle the high gate charge specified for IGBT datasheet?

The specified gate charge in the datasheet is for an operation with VGE of ± 20 V. Most customers use VGE in the range of +5.4 V to +7 V. Here the gate charge is much lower and with this value, typical switching frequencies can be addressed with standard drives.

3.Technical Support

In order to enable us to process your inquiry as efficiently as possible and ensure your case is duly reported, we kindly ask you to submit your request via our service team.