IGBT Modules for Driver Inverter

• Customization: Available
• Key Material: Sic
• Manufacturing Technology: Integrated Circuits Device
• Model NO.: IGBT Module
• Material: Compound Semiconductor
• Type: Intrinsic Semiconductor
• Package: MCM
• Signal Processing: Digital
• Application: Inverter
• Model: Wgf200b120f45
• Batch Number: 2021+
• Brand: Cetc
• Transport Package: Carton
• Specification: L106.4*W62mm
• Origin: Cn
• HS Code: 8504409190

Product Description

Product Photo:


Product parameter :
 

Parameter	symbol	conditions	value	unit
Collector-Emitter Voltage	VCES	VGE=0V, IC =1mA, Tvj=25ºC	1200	V
Continuous Collector Current	IC	Tc=80ºC, Tvjmax=175ºC	200	A
Peak Collector Current	ICRM	tp=1ms	400	A
Gate-Emitter Voltage	VGES	Tvj=25ºC	±20	V
Total Power Dissipation (IGBT-inverter)	Ptot	Tc=25ºC Tvjmax=175ºC	1358	W

Features

• Low inductance case
• Low switching losses
• Gold plated pin.
• Isolated baseplate
• High speed IGBT in NPT technology
• Vce(sat) with positive temperature coefficient
• Including ultra fast & soft recovery anti-parallel FWD
• High short circuit capability(10us)
• Low inductance module structure
• Maximum junction temperature 175ºC

Benefits

• Higher inverter output current for the same frame size
• Reduced system costs by simplification of the inverter systems
• Easy and most reliable assembly
• High inter-connection reliability
• suitable for press-in & soldering process

Applications

• High frequency drivers
• Motor control and drives
• Solutions for solar energy systems
• Uninterruptible Power Supply (UPS)
• Soft switching welding machine
• AC and DC servo drive amplifier
• SVG

E63 IGBT module is one of the most popular IGBT packages worldwide and is used in many different applications, such as General Purpose Drives; Commercial, Construction and Agricultural Vehicles as well as eBus; Solar; Wind; Traction; UPS and finally, Transmission and Distribution. In the latest module generation it is now feasible to increase the module current to 75 A. This is possible through the new IGBT7 technology enabling a higher power density and reduced BoM costs.

Circuit Diagram


Package drawing



E53 Series  products:
 

Model	Vces(V)	Ic(T=80)(A)	VCE(sat) Tj=125ºC	Eon+Eof(Tj=125)(mj)	Rthjc(KW)
WGL200B60F45	600	200	1.45	11.02	0.21
WGL300B60F45	600	300	1.45	15.01	0.15
WGL400B60F45	600	400	1.45	17.96	0.11
WGL600B60F45	600	600	1.45	33.25	0.09
WGF200B60F45	600	200	2.8	13.49	0.11
WGF300B60F45	600	300	2.8	21.38	0.10
WGF400B60F45	600	400	2.8	28.5	0.08
WGL200B65F45	650	200	1.45	12.02	0.21
WGL300B65F45	650	300	1.45	16.01	0.15
WGL400B65F45	650	400	1.45	19.23	0.11
WGL600B65F45	650	600	1.45	36.35	0.09
WGL100B120F45	1200	100	1.9	17.48	0.14
WGL150B120F45	1200	150	1.9	34.20	0.11
WGL200B120F45	1200	200	1.9	37.05	0.10
WGL300B120F45	1200	300	1.9	60.60	0.08
WGL400B120F45	1200	400	1.9	80.75	0.05
WGL450B120F45	1200	450	1.9	90.10	0.04

FAQ:

1.Why is the IGBT specified for 175ºC overload?

The CETC IGBT  is developed to operate at a continuous temperature of 175°C. The overload limitation is given by the package. Most of the applications are designed with an overload profile and here the IGBT is the perfect fit. The CETC IGBT provides the lowest static losses.


2.How to handle the high gate charge specified for IGBT datasheet?

The specified gate charge in the datasheet is for an operation with VGE of ± 20 V. Most customers use VGE in the range of +5.4 V to +7 V. Here the gate charge is much lower and with this value, typical switching frequencies can be addressed with standard drives.

3.Technical Support

In order to enable us to process your inquiry as efficiently as possible and ensure your case is duly reported, we kindly ask you to submit your request via our service team.