450A/1200V IGBT Module Replace Infineon FF450r12me4

• Customization: Available
• Application: Inverter
• Batch Number: 2021+
• Model NO.: WGL450B120E53
• Material: Compound Semiconductor
• Model: Wgl450b120e53
• Package: MCM
• Signal Processing: Digital
• Type: Intrinsic Semiconductor
• Key Material: Sic
• Brand: Cetc
• Transport Package: Carton
• Specification: L152*W62mm
• Origin: Cn
• HS Code: 8504409190

Product Description

Product Photo:


Product parameter :
 

Parameter	symbol	conditions	value	unit
Collector-Emitter Voltage	VCES	VGE=0V, IC =1mA, Tvj=25ºC	1200	V
Continuous Collector Current	IC	Tc=100ºC	450	A
Peak Collector Current	ICRM	ICRM=2IC	900	A
Gate-Emitter Voltage	VGES	Tvj=25ºC	±20	V
Total Power Dissipation (IGBT-inverter)	Ptot	Tc=25ºC Tvjmax=175ºC	2500	W

Features

• Highest power density
• Tj max = 175°C
• PressFIT control pins and screw power terminals
• Integrated NTC temperature sensor
• Isolated baseplate
• Low Vce(sat) with Planar technology
• Vce(sat) with positive temperature coefficient
• Including fast & soft recovery anti-parallel FWD
• High short circuit capability(10us)
• Low inductance module structure

Benefits

• Higher inverter output current for the same frame size
• Reduced system costs by simplification of the inverter systems
• Easy and most reliable assembly
• High inter-connection reliability
• suitable for press-in & soldering process

Applications

• Commercial, construction and agricultural vehicles (CAV)
• Motor control and drives
• Solutions for solar energy systems
• Uninterruptible Power Supply (UPS)
• Soft switching welding machine
• AC and DC servo drive amplifier

E52/E53 IGBT module is one of the most popular IGBT packages worldwide and is used in many different applications, such as General Purpose Drives; Commercial, Construction and Agricultural Vehicles as well as eBus; Solar; Wind; Traction; UPS and finally, Transmission and Distribution. In the latest module generation it is now feasible to increase the module current to 900 A. This is possible through the new IGBT technology enabling a higher power density and reduced BoM costs.

Circuit Diagram


Package drawing



E53 Series  products:
 

Model	Vces(V)	Ic(T=80)(A)	VCE(sat) Tj=125ºC	Eon+Eof(Tj=125)(mj)	Rthjc(KW)
WGL300B65E53	650	300	1.45	30	0.2
WGL450B65E53	650	450	1.45	43	0.09
WGL600B65E53	650	600	1.45	54	0.06
WGL150B120E53	1200	150	1.85	34	0.08
WGL225B120E53	1200	225	1.85	43	0.07
WGL300B120E53	1200	300	1.85	62	0.04
WGL450B120E53	1200	450	1.85	91	0.03
WGL600B120E53	1200	600	1.85	121	0.02
WGL150B170E53	1700	150	2.4	105	0.08
WGL225B170E53	1700	225	2.4	153	0.07
WGL300B170E53	1700	300	2.4	210	0.04
WGL450B170E53	1700	450	2.4	295	0.04
WGL600B170E53	1700	600	2.4	352	0.03

FAQ:

1.Why is the IGBT specified for 175ºC overload?

The CETC IGBT  is developed to operate at a continuous temperature of 175°C. The overload limitation is given by the package. Most of the applications are designed with an overload profile and here the IGBT is the perfect fit. The CETC IGBT provides the lowest static losses.


2.How to handle the high gate charge specified for IGBT datasheet?

The specified gate charge in the datasheet is for an operation with VGE of ± 20 V. Most customers use VGE in the range of +5.4 V to +7 V. Here the gate charge is much lower and with this value, typical switching frequencies can be addressed with standard drives.

3.Technical Support

In order to enable us to process your inquiry as efficiently as possible and ensure your case is duly reported, we kindly ask you to submit your request via our service team.